j/sst/u308 series vishay siliconix document number: 70237 s-50149?rev. h, 24-jan-05 www.vishay.com 1 n-channel jfets j308 sst308 u309 j309 sst309 U310 j310 sst310 product summary part number v gs(off) (v) v (br)gss min (v) g fs min (ms) i dss min (ma) j308 ? 1 to ? 6.5 ? 25 8 12 j309 ? 1 to ? 4 ? 25 10 12 j310 ? 2 to ? 6.5 ? 25 8 24 sst308 ? 1 to ? 6.5 ? 25 8 12 sst309 ? 1 to ? 4 ? 25 10 12 sst310 ? 2 to ? 6.5 ? 25 8 24 u309 ? 1 to ? 4 ? 25 10 12 U310 ? 2.5 to ? 6 ? 25 10 24 features benefits applications excellent high frequency gain: gps 11.5 db @ 450 mhz very low noise: 2.7 db @ 450 mhz very low distortion high ac/dc switch off-isolation wideband high gain very high system sensitivity high quality of amplification high-speed switching capability high low-level signal amplification high-frequency amplifier/mixer oscillator sample-and-hold very low capacitance switches description the j/sst/u308 series offers superb amplification characteristics. of special interest is its high-frequency performance. even at 450 mhz, this series offers hi gh power gain at low noise. low-cost j series to-226aa (to-92) packaging supports automated assembly with tape- and-reel options. the sst series to-236 (sot-23) package provi des surface-mount capabilities and is available with tape-a nd-reel options. the u series hermetically-sealed to-206ac (to-52) package supports full military processing. (see militar y and packaging information for further details.) for similar dual products packaged in the to-78, see the u430/431 data sheet . d s g to-236 (sot-23) 2 3 1 to-226aa (to-92) top view j308 j309 j310 d g s 1 2 3 top view sst308 (z8)* sst309 (z9)* sst310 (z0)* *marking code for to-236 top view u309 U310 g and case to-206ac (to-52) d s 1 23 for applications information see an104.
j/sst/u308 series vishay siliconix www.vishay.com 2 document number: 70237 s-50149?rev. h, 24-jan-05 absolute maximum ratings gate-drain, gate-source voltage ? 25 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . gate current : (j/sst prefixes) 10 ma . . . . . . . . . . . . . . . . . . . . (u prefix) 20 ma . . . . . . . . . . . . . . . . . . . . . . . . . . lead temperature ( 1 / 16 ? from case for 10 sec.) 300 c . . . . . . . . . . . . . . . . . . . storage t emperature : (j/sst prefixes) ? 55 to 150 c . . . . . . . . . . . . . . (u prefix) ? 65 to 175 c . . . . . . . . . . . . . . . . . . . . operating junction t emperature ? 55 to 150 c . . . . . . . . . . . . . . . . . . . . . . . . . . power dissipation : (j/sst prefixes) a 350 mw . . . . . . . . . . . . . . . . . (u prefix) b 500 mw . . . . . . . . . . . . . . . . . . . . . . . notes a. derate 2.8 mw/ c above 25 c b. derate 4 mw/ c above 25 c specifications for j/sst308, j/sst309 and j/sst310 (t a = 25 c unless noted) limits j/sst308 j/sst309 j/sst310 parameter symbol test conditions typ a min max min max min max unit static gate-source breakdown voltage v (br)gss i g = ? 1 a , v ds = 0 v ? 35 ? 25 ? 25 ? 25 v gate-source cutoff voltage v gs(off) v ds = 10 v, i d = 1 na ? 1 ? 6.5 ? 1 ? 4 ? 2 ? 6.5 v saturation drain current b i dss v ds = 10 v, v gs = 0 v 12 60 12 30 24 60 ma gate reverse current i gss v gs = ? 15 v, v ds = 0 v ? 0.002 ? 1 ? 1 ? 1 na gate reverse current i gss t a = 125 c ? 0.001 ? 1 ? 1 ? 1 a gate operating current i g v dg = 9 v, i d = 10 ma ? 15 pa drain-source on-resistance r ds(on) v gs = 0 v, i d = 1 ma 35 gate-source forward voltage v gs(f) i g = 10 ma v ds = 0 v j 0.7 1 1 1 v dynamic common-source forward t ransconductance g fs v ds = 10 v, i d = 10 ma 14 8 10 8 ms common-source output conductance g os v ds = 10 v , i d = 10 ma f = 1 khz 110 250 250 250 s common-source c i j 4 5 5 5 common-source input capacitance c iss v ds = 10 v v 10 v sst 4 pf common-source c c rss ds v gs = ? 10 v f = 1 mhz j 1.9 2.5 2.5 2.5 pf common source reverse transfer capacitance c rss f = 1 mhz sst 1.9 equivalent input noise voltage e n v ds = 10 v, i d = 10 ma f = 100 hz 6 nv ? hz high frequency common-gate g f f = 105 mhz 14 common-gate forward t ransconductance g fg f = 450 mhz 13 ms common-gate g f = 105 mhz 0.16 ms common-gate output conductance g og v ds = 10 v f = 450 mhz 0.55 common gate power gain c g v ds = 10 v i d = 10 ma f = 105 mhz 16 common-gate power gain c g pg f = 450 mhz 11.5 db noise figure nf f = 105 mhz 1.5 db n o i se fi gure nf f = 450 mhz 2.7 notes a. typical values are for design aid only, not guaranteed nor subject to production testing. nzb b. pulse test: pw 300 s duty cycle 3%. c. gain (g pg ) measured at optimum input noise match.
j/sst/u308 series vishay siliconix document number: 70237 s-50149?rev. h, 24-jan-05 www.vishay.com 3 specifications for u309 and U310 (t a = 25 c unless noted) limits u309 U310 parameter symbol test conditions typ a min max min max unit static gate-source breakdown voltage v (br)gss i g = ? 1 a , v ds = 0 v ? 35 ? 25 ? 25 v gate-source cutoff voltage v gs(off) v ds = 10 v, i d = 1 na ? 1 ? 4 ? 2.5 ? 6 v saturation drain current b i dss v ds = 10 v, v gs = 0 v 12 30 24 60 ma gate reverse current i gss v gs = ? 15 v, v ds = 0 v ? 0.002 ? 0.15 ? 0.15 na gate reverse current i gss t a = 125 c ? 0.001 ? 0.15 ? 0.15 a gate operating current i g v dg = 9 v, i d = 10 ma ? 15 pa drain-source on-resistance r ds(on) v gs = 0 v, i d = 1 ma 35 gate-source forward voltage v gs(f) i g = 10 ma , v ds = 0 v 0.7 1 1 v dynamic common-source forward t ransconductance g fs v ds = 10 v, i d = 10 ma 14 10 10 ms common-source output conductance g os v ds = 10 v , i d = 10 ma f = 1 khz 110 250 250 s common-source input capacitance c iss v ds = 10 v, v gs = ? 10 v 4 5 5 pf common-source reverse transfer capacitance c rss v ds = 10 v , v gs = ? 10 v f = 1 mhz 1.9 2.5 2.5 pf equivalent input noise voltage e n v ds = 10 v, i d = 10 ma f = 100 hz 6 nv ? hz high frequency common-gate g f f = 105 mhz 14 common-gate forward t ransconductance g fg f = 450 mhz 13 ms common-gate g f = 105 mhz 0.16 ms common-gate output conductance g og v ds = 10 v f = 450 mhz 0.55 common gate power gain c, d g v ds = 10 v i d = 10 ma f = 105 mhz 16 14 14 common-gate power gain c, d g pg f = 450 mhz 11.5 10 10 db noise figure d nf f = 105 mhz 1.5 2 2 db n o i se fi gure d nf f = 450 mhz 2.7 3.5 3.5 notes a. typical values are for design aid only, not guaranteed nor subject to production testing. nzb b. pulse test: pw 300 s duty cycle 3%. c. gain (g pg ) measured at optimum input noise match. d. not a production test. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratin gs only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability.
j/sst/u308 series vishay siliconix www.vishay.com 4 document number: 70237 s-50149?rev. h, 24-jan-05 typical characteristics (t a = 25 c unless otherwise noted) 100 0 ? 5 ? 4 ? 3 ? 1 80 20 0 50 40 10 0 drain current and transconductance vs. gate-source cutoff voltage gate leakage current output characteristics on-resistance and output conductance vs. gate-source cutoff voltage common-source forward transconductance vs. drain current v gs(off) ? gate-source cutoff voltage (v) v dg ? drain-gate voltage (v) i d ? drain current (ma) v gs(off) ? gate-source cutoff voltage (v) v ds ? drain-source voltage (v) i dss @ v ds = 10 v, v gs = 0 v g fs @ v ds = 10 v, v gs = 0 v f = 1 khz g fs i dss t a = ? 55 c 25 c 125 c v gs = 0 v ? 0.2 v ? 0.4 v ? 0.6 v ? 0.8 v v gs(off) = ? 3 v 60 40 ? 2 30 20 100 ? 3 ? 5 ? 4 ? 1 80 0 300 240 120 60 0 60 40 20 ? 2 0 180 r ds @ i d = 1 ma, v gs = 0 v g os @ v ds = 10 v, v gs = 0 v, f = 1 khz r ds 06 31215 9 i gss @ 125 c t a = 125 c t a = 25 c 200 ma 0.1 1 10 20 16 8 4 0 12 15 0 0.4 0.2 0.8 1 12 6 3 0 9 0.6 ? 1.0 v g os i gss @ 25 c 0.1 pa 1 pa 10 pa 100 pa 1 na 10 na v ds = 10 v f = 1 khz v gs(off) = ? 1.5 v 10 ma output characteristics v ds ? drain-source voltage (v) v gs = 0 v ? 1.2 v ? 0.4 v ? 1.6 v ? 0.8 v 30 0 0.4 0.2 0.8 1 24 12 6 0 18 0.6 ? 2.0 v ? 2.4 v v gs(off) = ? 3 v i g @ i d = 10 ma 200 ma i dss ? saturation drain current (ma) g fs ? forward transconductance (ms) r ds(on) ? drain-source on-resistance ( ? ) g os ? output conductance ( s) i g ? gate leakage i d ? drain current (ma) i d ? drain current (ma) g fs ? forward transconductance (ms)
j/sst/u308 series vishay siliconix document number: 70237 s-50149?rev. h, 24-jan-05 www.vishay.com 5 typical characteristics (t a = 25 c unless otherwise noted) output characteristics v ds ? drain-source voltage (v) 50 04 2810 40 20 10 0 30 6 ? 2.4 v v gs = 0 v ? 0.4 v ? 0.8 v ? 1.2 v ? 1.6 v ? 2.0 v transfer characteristics v gs ? gate-source voltage (v) 30 0 ? 1.2 ? 0.4 ? 1.6 ? 2 24 12 6 0 18 ? 0.8 t a = ? 55 c v gs(off) = ? 1.5 v 125 c transfer characteristics v gs ? gate-source voltage (v) 100 0 ? 1.8 ? 0.6 ? 2.4 ? 3 80 40 20 0 60 ? 1.2 t a = ? 55 c 25 c v gs(off ) = ? 3 v 125 c 30 0 ? 1.2 ? 1.6 ? 0.4 ? 2 24 12 6 0 ? 0.8 18 transconductance vs. gate-source voltage v gs ? gate-source voltage (v) v gs(off) = ? 1.5 v t a = ? 55 c 125 c 50 0 ? 1.8 ? 2.4 ? 0.6 ? 3 40 20 10 0 ? 1.2 30 transconductance vs. gate-source voltage v gs ? gate-source voltage (v) t a = ? 55 c 25 c 125 c v gs(off) = ? 3 v v gs(off) = ? 3 v v ds = 10 v v ds = 10 v v ds = 10 v f = 1 khz v ds = 10 v f = 1 khz 25 c 25 c output characteristics v ds ? drain-source voltage (v) v gs = 0 v ? 0.2 v ? 0.4 v ? 0.6 v ? 0.8 v ? 1.0 v 20 068 210 16 8 4 0 4 12 v gs(off) = ? 1.5 v g fs ? forward transconductance (ms) g fs ? forward transconductance (ms) i d ? drain current (ma) i d ? drain current (ma) i d ? drain current (ma) i d ? drain current (ma)
j/sst/u308 series vishay siliconix www.vishay.com 6 document number: 70237 s-50149?rev. h, 24-jan-05 typical characteristics (t a = 25 c unless otherwise noted) 1 10 100 100 80 40 20 0 60 v gs(off) = ? 1.5 v v gs(off) = ? 3 v on-resistance vs. drain current i d ? drain current (ma) 110 0.1 100 80 40 20 0 60 i d ? drain current (ma) r l 10 v i d assume v dd = 15 v, v ds = 5 v v gs(off) = ? 1.5 v v gs(off) = ? 3 v circuit voltage gain vs. drain current 15 0 ? 12 ? 16 ? 20 ? 4 12 6 3 0 9 ? 8 common-source input capacitance vs. gate-source voltage v ds = 0 v f = 1 mhz v ds = 5 v v gs ? gate-source voltage (v) common-source reverse feedback capacitance vs. gate-source voltage 10 0 ? 12 ? 20 ? 16 ? 4 8 4 2 0 6 ? 8 v ds = 0 v f = 1 mhz v ds = 5 v v gs ? gate-source voltage (v) 100 10 1 0.1 100 1000 (ms) t a = 25 c v dg = 10 v i d = 10 ma common ? gate g ig b ig input admittance vs. frequency f ? frequency (mhz) 100 10 1 0.1 100 1000 (ms) t a = 25 c v dg = 10 v i d = 10 ma common ? gate ? g fg b fg forward admittance vs. frequency f ? frequency (mhz) 200 500 200 500 a v g fs r l 1 r l g os a v ? voltage gain r ds(on) ? drain-source on-resistance ( ? ) c iss ? input capacitance (pf) c rss ? reverse feedback capacitance (pf)
j/sst/u308 series vishay siliconix document number: 70237 s-50149?rev. h, 24-jan-05 www.vishay.com 7 typical characteristics (t a = 25 c unless otherwise noted) 10 100 1 k 100 k 10 k 20 16 8 4 0 12 equivalent input noise voltage vs. frequency i d = 1 ma v ds = 10 v i d = 10 ma f ? frequency (hz) 150 120 60 30 0 0.1 1 10 90 output conductance vs. drain current v gs(off) = ? 3 v i d ? drain current (ma) t a = ? 55 c 25 c 125 c 10 1 0.1 0.01 100 1000 (ms) t a = 25 c v dg = 10 v i d = 10 ma common ? gate ? b rg ? g rg +g rg reverse admittance vs. frequency f ? frequency (mhz) 100 10 1 0.1 100 1000 (ms) t a = 25 c v dg = 10 v i d = 10 ma common ? gate g og b og output admittance vs. frequency f ? frequency (mhz) 200 500 200 500 v ds = 10 v f = 1 khz e n ? noise voltage nv / hz gos ? output conductance ( s)
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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